IGBT - IXSH45N120B HIGH VOLTAGE IGBT 1200V 75A vce 3.0 V

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 550,000 Tomman

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Keywords: IXSH45N120B

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 75A

Maximum junction temperature (Tj), °C:

Rise time, nS: 380

Maximum collector capacity (Cc), pF:

Package: TO247